Invited Speakers

By clicking on the PDF file icon you can view the presentation documents, but not download or process them.

Prof. Takayasu Sakurai (Univ. of Tokyo)

Professor, The University of Tokyo

Prof. Takayasu Sakurai

Takayasu Sakurai received the Ph.D. degree in EE from the University of Tokyo in 1981. In 1981 he joined Toshiba Corporation, where he designed CMOS DRAM, SRAM, RISC processors, DSPs, and SoC Solutions. He has worked extensively on interconnect delay and capacitance modeling known as Sakurai model and alpha power-law MOS model. From 1988 through 1990, he was a visiting researcher at the University of California Berkeley, where he conducted research in the field of VLSI CAD. From 1996, he has been a professor at the University of Tokyo, working on low-power high-speed VLSI, memory design, interconnects, ambient electronics, and organic IC's. He has published more than 600 technical publications including 100 invited presentations and several books and filed more than 200 patents. He is the executive committee chair for VLSI Symposia and a steering committee chair for IEEE A-SSCC. He served as a conference chair for the Symp. on VLSI Circuits, and ICICDT, a vice chair for ASPDAC, a TPC chair for the A-SSCC, and VLSI symp., and a technical committee member for ISSCC, CICC, A-SSCC, DAC, ESSCIRC, ICCAD, ISLPED, and other international conferences. He gave keynote speech at more than 50 conferences including ISSCC, ESSCIRC and ISLPED.

He is a recipient of 2010 IEEE Donald O. Pederson Award in Solid-State Circuits, 2010 and 2011 IEEE Paul Rappaport award, 2010 IEICE Electronics Society award, 2009 IEICE achievement award, 2005 IEEE ICICDT award, 2004 IEEE Takuo Sugano award and 2005 P&I patent of the year award and four product awards. He was an elected AdCom member for the IEEE Solid-State Circuits Society and an IEEE CAS and SSCS distinguished lecturer. He is an IEICE Fellow and IEEE Fellow.

Prof. Eli Yablonovitch (E³S/UC Berkeley)

Prof. Eli Yablonovitch

Eli Yablonovitch is the Director of the NSF Center for Energy Efficient Electronics Science (E³S), a multi-University Center based at Berkeley.

He received his Ph.d. degree in Applied Physics from Harvard University in 1972. He worked for two years at Bell Telephone Laboratories, and then became a professor of Applied Physics at Harvard. In 1979 he joined Exxon to do research on photovoltaic solar energy. Then in 1984, he joined Bell Communications Research, where he was a Distinguished Member of Staff, and also Director of Solid-State Physics Research. In 1992 he joined the University of California, Los Angeles, where he was the Northrop-Grumman Chair Professor of Electrical Engineering. Then in 2007 he became Professor of Electrical Engineering and Computer Sciences at UC Berkeley, where he holds the James & Katherine Lau Chair in Engineering.

Prof. Yablonovitch is a Fellow of the IEEE, the OSA and the APS. He is a Life Member of Eta Kappa Nu, and a Member of the National Academy of Engineering and the National Academy of Sciences. He has been awarded the Adolf Lomb Medal, the W. Streifer Scientific Achievement Award, the R.W. Wood Prize, the Julius Springer Prize, and the Mountbatten Medal.

Dr. Pouya Hashemi (IBM, USA)

Former post-doctoral fellow at MIT, USA
Current RSM at IBM Corporation, USA

Dr. Pouya Hashemi

Pouya Hashemi received his Ph.D. degree with honor in Department of Electrical Engineering and Computer Science at MIT, in September 2010 and his B.Sc. and M.Sc. degrees in electrical engineering, both with highest honors, from University of Tehran in 2003 and 2005, respectively.

He is currently a research staff member (RSM) at IBM Corporation, USA, focusing on exploratory CMOS devices and integration for sub-10nm nodes. In 2005, he joined MIT Microsystems Technology Laboratories where his research was focused on fabrication and investigation of carrier transport in nano-scale strained SOI, silicon-germanium and germanium channel CMOS devices with planar and nanowire architectures. In summer 2009, he was with IBM T.J. Watson photovoltaic research center at Yorktown Heights, NY where he worked on photovoltaic development. In 2010 and 2011, he was a post-doctoral fellow at the MIT Microsystems Technology Laboratories working on advanced strained-Ge substrates and nanowires for high-performance CMOS and SiGe based solar cells.

Dr. Hashemi is the recipient of the IBM Ph.D. Fellowship award in 2008, TSMC oustanding research award/commendation in 2010, the Jin-Au Kong Award for best MIT Electrical Engineering Ph.D. Thesis in 2011, and winner of the MIT Microsystems Technology Laboratories Doctoral Dissertation Seminar in Spring 2011. He has co-authored more than 50 peer-reviewed conference and journal publications. He is also a member of IEEE Electron Device Society (EDS) and Material Research Society (MRS).

Dr. Thomas Rueckes

CTO, Nantero, Inc., USA

Dr. Thomas Rueckes was born in Bad Marienberg, Germany, on December 29, 1968. He received his Diplom in chemistry from the University of Marburg, Germany in 1995 and the Ph.D. degree in chemistry from Harvard University in 2001. At Harvard University, in Prof. Charles Lieber’s laboratory, he invented the basic concept of a resistance change carbon nanotube (CNT) memory device, later called NRAM®. In 2001, he co-founded Nantero, Inc. to develop CNT memory devices into a suitable technology for real world, commercial semiconductor memory applications. At Nantero, he is directing a team of semiconductor specialists working on CNT fab process integration, circuit design, device, product, test engineering and CNT chemistry. His work there has focused on “top-down” integration of spin-coated CNT films which are used as the resistance change layer in 1T1R or 1D1R crosspoint memory cells and exhibit a desirable combination of fast read/write speeds, low voltage/current operation, excellent reliability and high yield. Development and product development efforts of CNT memory are in progress with several large semiconductor partner companies in the fields of embedded and standalone nonvolatile memory.

Dr. Simone Lavizzari (Micron, Italy)

Device Engineer, R&D Process Development, Micron

Dr. Simone Lavizzari

Dr. Simone Lavizzari was born in Milano, Italy, in 1982. He received the first-level Laurea (Bachelor) degree in electrical engineering (with first-class honors), the second-level Laurea (Master) degree in electrical engineering (with first-class honors), and the Ph.D. degree with the Politecnico di Milano, Milano, in 2004, 2006, and 2009, respectively. During his second-level graduation thesis and his research activity, he worked on phase change memories (PCMs) within the Department of Electrical Engineering, Politecnico di Milano, under the guidance of Prof. Lacaita. His research interests included the modeling of electrical and physical properties in PCM devices and the design of VLSI analog instrumentation for biological applications.

He joined Numonyx in 2010 and he is currently with Micron, R&D Agrate Brianza, Italy, as a device engineer working on PCM process development and electrical characterization. He is author and co-author of more than fifteen papers.

Dr. Lavizzari was the recipient of the Best Student Medal while working on the second-level Laurea degree.

Prof. Tsunenobu Kimoto

Graduate School of Engineering, Kyoto University

Dr. Tsunenobu Kimoto

Dr. Tsunenobu Kimoto was born in Wakayama, Japan, on December 27, 1963. He received the B.E. and M.E. degrees in Electrical Engineering from Kyoto University, Japan, in 1986 and 1988, respectively. He joined Sumitomo Electric Industries, LTD in April of 1988, where he conducted R&D of amorphous Si solar cells and the semiconducting diamond material. In 1990, he started his academic career as a Research Associate at Kyoto University, and received the Ph.D. degree from Kyoto University in 1996, based on his work on SiC epitaxial growth, characterization, and high-voltage diodes. From September in 1996 through August in 1997, he was a visiting scientist at Linköping University, Sweden, where he was involved in fast epitaxy of SiC and high-voltage Schottky barrier diodes (SBD). He is currently a Professor at Department of Electronic Science and Engineering, Kyoto University.

His main research activity includes SiC epitaxial growth, optical and electrical characterization, defect electronics, ion implantation, MOS physics, and high-voltage devices (SBD, PiN, MOSFET, BJT, IGBT). He has also been involved in nano-scale Si devices, novel materials for nonvolatile memory, and GaN-based electronic devices. He has published over 300 papers in scientific journals and more than 300 papers in international conference proceedings. He is a member of IEEE, MRS, JSAP, IEICE, and IEE.